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Número de pieza

componentes Descripción

fabricante

IRF7457PBF-1

HEXFET Power MOSFET

International Rectifier 

IRF7457PbF-1

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

–––

Static Drain-to-Source On-Resistance

–––

VGS(th)

Gate Threshold Voltage

1.0

IDSS

Drain-to-Source Leakage Current

–––

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

––– –––

0.023 –––

5.5 7.0

8.0 10.5

––– 3.0

––– 20

––– 100

––– 200

––– -200

V

V/°C

mΩ

V

μA

nA

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 15A ƒ

VGS = 4.5V, ID = 12A ƒ

VDS = VGS, ID = 250μA

VDS = 16V, VGS = 0V

VDS = 16V, VGS = 0V, TJ = 125°C

VGS = 16V

VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

30 ––– ––– S VDS = 16V, ID = 12A

––– 28 42

ID = 12A

––– 11 17 nC VDS = 10V

––– 10 15

VGS = 4.5V, ƒ

––– 25 38

VGS = 0V, VDS = 10V

––– 14 –––

VDD = 10V,

––– 16 ––– ns ID = 12A

––– 16 –––

RG = 1.8Ω

––– 7.5 –––

VGS = 4.5V ƒ

––– 3100 –––

VGS = 0V

––– 1600 –––

VDS = 10V

––– 270 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

Typ.

–––

–––

Max.

265

15

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ. Max.

––– 2.5

––– 120

0.8 1.3

0.67 –––

50 75

70 105

50 75

74 110

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 12A, VGS = 0V ƒ

TJ = 125°C, IS = 12A, VGS = 0V

TJ = 25°C, IF = 12A, VR= 15V

di/dt = 100A/μs ƒ

TJ = 125°C, IF = 12A, VR=15V

di/dt = 100A/μs ƒ

2

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June 30, 2014

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