IRFB61N15D Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRFB61N15D

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFB61N15D，IIRFB61N15D

·FEATURES

·Static drain-source on-resistance:

RDS(on) ≤32mΩ

·Enhancement mode

·Fast Switching Speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·High frequency DC-DC converters

·Uninterruptible Power Supplies

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

150

VGS

Gate-Source Voltage

±30

ID

Drain Current-Continuous

60

IDM

Drain Current-Single Pulsed

250

PD

Total Dissipation @TC=25℃

330

Tj

Max. Operating Junction Temperature

175

Tstg

Storage Temperature

-55~175

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

Rth(ch-a) Channel-to-ambient thermal resistance

MAX

0.45

62

UNIT

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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