IRFR9310PBF(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFR9310PBF Datasheet PDF : 8 Pages
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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
400
Coss = Cds + Cgd
300
Ciss
200
Coss
100
Crss
0
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
TJ = 150°C
1
TJ = 25°C
0.1
1.0
VGS = 0 V
2.0
3.0
4.0
5.0
-VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = -1.1A
16
12
VDS =-320V
VDS =-200V
VDS =-80V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
10us
100us
1
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
10
100
10ms
1000
-VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91284
S-81378-Rev. A, 07-Jul-08
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