IRFU9310(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors

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IRFU9310
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Vishay Siliconix

2.0

1.6

1.2

0.8

0.4

0.0

25

50

75

100

125

150

TC , Case Temperature ( °C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

VDS

VGS

RG

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

0.01

0.00001

SINGLE PULSE

(THERMAL RESPONSE)

PDM

t1

t2

Notes:

1. Duty factor D = t1 / t 2

2. Peak T J = P DM x Z thJC + TC

0.0001

0.001

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91284

S-81378-Rev. A, 07-Jul-08

www.vishay.com

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