IRFPC50APBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Lista de partido

IRFPC50APBF

Power MOSFET

Vishay Semiconductors 

IRFPC50A, SiHFPC50A

Vishay Siliconix

12

10

8

6

4

2

0

25

50

75

100

125

150

TC , Case Temperature ( °C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

1

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.001

0.00001

SINGLE PULSE

(THERMAL RESPONSE)

PDM

t1

t2

Notes:

1. Duty factor D = t1 / t 2

2. Peak T J = P DM x Z thJC + TC

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91241

S11-0443-Rev. B, 14-Mar-11

www.vishay.com

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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