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IRFBF20L(2011) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Lista de partido
IRFBF20L
(Rev.:2011)
Vishay
Vishay Semiconductors Vishay
IRFBF20L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, RG = 25 Ω, IAS = 1.7 A (see fig. 12).
c. ISD 1.7 A, dI/dt 70 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBF20/SiHFBF20 data and test conditions.
LIMIT
- 55 to + 150
300d
10
UNIT
°C
N
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case
RthJC
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
TYP.
-
-
MAX.
40
2.3
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VGS = ± 20 V
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IDSS
RDS(on)
gfs
VDS = 900 V, VGS = 0 V
VDS = 720 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.0 Ab
VDS = 50 V, ID = 1.0 Ab
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VGS = 10 V
ID = 1.7 A, VDS = 360 V,
see fig. 6 and 13b
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 450 V, ID = 1.7 A,
RG = 18 Ω, VGS = 10 V, see fig. 10b
Fall Time
tf
MIN.
900
-
2.0
-
-
-
-
0.6
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
1.1
- mV/°C
-
4.0
V
-
± 100 nA
-
100
µA
-
500
-
8.0
Ω
-
-
S
490
-
55
-
pF
18
-
-
38
-
4.7
nC
-
21
8.0
-
21
-
ns
56
-
32
-
www.vishay.com
2
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08

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