IRL3803V Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRL3803V

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRL3803V，IIRL3803V

·FEATURES

·Static drain-source on-resistance:

RDS(on) ≤5.5mΩ

·Enhancement mode

·Fast Switching Speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRIPTION

·Combine with the fast switching speed and ruggedized device

design,provide the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

30

VGS

Gate-Source Voltage

±16

ID

Drain Current-Continuous

140

IDM

Drain Current-Single Pulsed

470

PD

Total Dissipation @TC=25℃

200

Tj

Max. Operating Junction Temperature

175

Tstg

Storage Temperature

-55~175

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(ch-c) Channel-to-case thermal resistance

Rth(ch-a) Channel-to-ambient thermal resistance

MAX

0.74

62

UNIT

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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