IRFU4105Z Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.

Número de pieza

componentes Descripción

Lista de partido

IRFU4105Z

Power MOSFET

Kersemi Electronic Co., Ltd. 

IRFR4105Z

IRFU4105Z

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, thi

MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an extremely

efficient and reliable device for use in Automotive applications and

a wide variety of other applications.

D

VDSS = 55V

RDS(on) = 24.5mΩ

ID = 30A

S

D-Pak

IRFR4105Z

I-Pak

IRFU4105Z

Absolute Maximum Ratings

Parameter

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

PD @TC = 25°C Power Dissipation

Linear Derating Factor

VGS

Gate-to-Source Voltage

d EAS (Thermally limited) Single Pulse Avalanche Energy

h EAS (Tested ) Single Pulse Avalanche Energy Tested Value

Ù IAR

Avalanche Current

g EAR

Repetitive Avalanche Energy

TJ

TSTG

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

RθJC

RθJA

i Junction-to-Case

Junction-to-Ambient (PCB mount)

RθJA

Junction-to-Ambient

Max.

30

21

120

48

0.32

± 20

29

46

See Fig.12a, 12b, 15, 16

-55 to + 175

300 (1.6mm from case )

y y 10 lbf in (1.1N m)

Typ.

–––

–––

–––

Max.

3.12

40

110

Units

A

W

W/°C

V

mJ

A

mJ

°C

Units

°C/W

2014-8-15

1

www.kersemi.com

Share Link: