HUF75309T3ST Ver la hoja de datos (PDF) - Fairchild Semiconductor
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HUF75309T3ST Datasheet PDF : 9 Pages
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HUF75309T3ST
Typical Performance Curves (Continued)
20
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20 VDD = 15V
15
25
20
15
10
5
0
0
VGS = 20V
VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 3A
1.5
10
5
0
0
25oC
150oC
-55oC
1.5
3.0
4.5
6.0
7.5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
1.2
VGS = VDS, ID = 250µA
1.0
1.0
0.5
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
ID = 250µA
1.1
0.8
1.0
0.6
0.9
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.8
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75309T3ST Rev. B
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