IRF523 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Lista de partido
IRF523 Datasheet PDF : 3 Pages
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IRF120-123/IRF520-523
MTP10N08/10N10
Maximum Ratings
Symbol
Characteristic
Rating
IRF120/122
Rating
IRF520/522
Rating
IRF122/123
MTP10N10
MTP10N08
IRF522/523
Unit
VDSS
Drain to Source Voltage1
100
80
60
V
VDGR
Drain to Gate Voltage1
RQS = 20 kft
100
80
60
V
VGS
Tj, T8|g
Gate to Source Voltage
Operating Junction and
Storage Temperatures
±20
±20
±20
V
-55 to +150
-55 to +150
-55 to +150
°c
TL
Maximum Lead Temperature
275
275
275
°c
for Soldering Purposes,
1/8" From Case for 5 s
Maximum Thermal Characteristics
R«JC
RftJA
PD
IDM
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Total Power Dissipation
at Tc = 25°C
Pulsed Drain Current2
IRF120-123/IRF520-523
3.12
30/80
40
20
MTP10N08/10
1.67
80
75
32
"C/W
°C/W
W
A
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Off Characteristics
V(BR)DSS Drain Source Breakdown Voltage1
IRF120/122/520/522/
MTP10N10
MTP10N08
IRF121/123/521/523
loss
Zero Gate Voltage Drain Current
Win
Max
100
80
60
250
1000
IQSS
Gate-Body Leakage Current
IRF120-123
IRF520-523/MTP10N08/10
±100
+ 500
Unit
Test Conditions
V
VGS = 0 V, ID = 250 MA
UA
VDS - Rated VDSS. VGS - 0 V
MA
VDS = 0.8 x Rated VDSs,
VGS = 0 V, TC=125°C
nA
VQS - ± 20 v, VDS - o V
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