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MJE16002

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

MJE16002

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 16 is based on TC = 25_C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC ≥ 25_C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figures 17 and 18 may be

found at any case temperature by using the appropriate curve

on Figure 20.

TJ(pk) may be calculated from the data in Figure 15. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base−to−emitter junction reverse biased. Under

these conditions the collector voltage must be held to a safe

level at or below a specific value of collector current. This

can be accomplished by several means such as active

clamping, RC snubbing, load line shaping, etc. The safe

level for these devices is specified as Reverse Bias Safe

operating Area and represents the voltage−current condition

allowable pulling reverse biased turn−off. This rating is

verified under clamped conditions so that the device is never

subjected to an avalanche mode. Figure 17 gives the

RBSOA characteristics.

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