BAS70-04LT1 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
fabricante
BAS70-04LT1 Datasheet PDF : 4 Pages
| |||
BAS70−04LT1
Preferred Device
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Value
Reverse Voltage
VR
70
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
Operating Junction and Storage
Temperature Range
TJ, Tstg −55 to +150
Unit
Volts
Unit
mW
mW/°C
°C
http://onsemi.com
70 VOLTS
SCHOTTKY BARRIER DIODE
ANODE
1
CATHODE
2
3
CATHODE/ANODE
3
1
2
SOT−23
(TO−236AB)
CASE 318
MARKING DIAGRAM
CG M
CG = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS70−04LT1 SOT−23 3000 / Tape & Reel
BAS70−04LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 6
Publication Order Number:
BAS70−04LT1/D
Share Link: 