IRF830 Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRF830

N-channel mosfet transistor

Inchange Semiconductor 

MOSFET

IRF830

N-channel mosfet transistor

INCHANGE

‹ Features

·With TO-220 package

·Simple drive requirements

·Fast switching

·VDSS=500V; RDS(ON)≤1.5Ω;ID=4.5A

·1.gate 2.drain 3.source

‹ Absolute Maximum Ratings Tc=25℃

SYMBOL

PARAMETER

VDSS

Drain-source voltage (VGS=0)

VGS

Gate-source voltage

ID

Drain Current-continuous@ TC=25℃

Ptot

Total Dissipation@TC=25℃

Tj

Max. Operating Junction temperature

Tstg

Storage temperature

RATING

500

±20

4.5

100

150

-65~150

UNIT

V

V

A

W

℃

℃

‹ Electrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS

VGS(TH)

RDS(ON)

IGSS

IDSS

VSD

Drain-source breakdown voltage VGS=0; ID=0.25mA

Gate threshold voltage

VDS= VGS; ID=0.25mA

Drain-source on-stage resistance VGS=10V; ID=2.7A

Gate source leakage current

VGS=±20V;VDS=0

Zero gate voltage drain current VDS=500V; VGS=0

Diode forward voltage

IF=4.5A; VGS=0

123

TO-220

MIN MAX UNIT

500

V

2

4

V

1.5

Ω

±100 nA

1.0 uA

1.6

V

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