G20N50E1 Ver la hoja de datos (PDF) - Intersil
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componentes Descripción
Lista de partido
G20N50E1 Datasheet PDF : 5 Pages
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HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
40
VGE = 10V, RGEN = RGS = 50Ω
35
30
25
20
15
10
5
0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25Ω,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
100
80
60
40
20
0
+25
+50 +75 +100 +125 +150
TC, CASE TEMPERATURE (oC)
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING
CURVE
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
TC, JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
35
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
30 DUTY CYCLE = 0.5% MAX.
25
20
15
10
+25oC
-40oC
5
+125oC
0
0
2.5
5.0
7.5
10.0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
35
VGE = 20V
30
VGE = 10V
VGE = 8V
25
TC = +25oC
VGE = 7V
VGE = 6V
20
15
VGE = 5V
10
5
VGE = 4V
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
35
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
30
DUTY CYCLE = 0.5% MAX.
25
20
15
+25oC
10
5
0
0
1
2
3
4
VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-63
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