IRFS510 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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IRFS510 Datasheet PDF : 7 Pages
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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
101 Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. T = 25 oC
C
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.8
0.6
VGS = 10 V
0.4
0.2
VGS = 20 V
@ Note : TJ = 25 oC
0.0
0
5
10
15
20
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
350
280
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
210
C oss
140
C rss
70
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRFS510A
Fig 2. Transfer Characteristics
101
175 oC
100
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
10-1
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
101
100
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID = 5.6 A
0
0
2
4
6
8
10
QG , Total Gate Charge [nC]
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