IRF7335D1PBF Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF7335D1PBF Datasheet PDF : 12 Pages
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IRF7335D1PbF
Electrical Characteristics
Parameter
Q1-Control FET Q2-Synch FET
& Schottky
Min Typ Max Min Typ Max Units
Conditions
Drain-to-Source
Breakdown Voltage
Breakdown Voltage
Tem. Coefficient
Static Drain-Source
on Resistance
BVDSS 30
∆BVDSS/∆TJ 0.025
30
0.033
V VGS = 0V, ID = 250µA
V Reference to 25°C, ID = 1.0mA
RDS(on)
13.4 17.5
9.6 12.8 mΩ VGS = 4.5V, ID = 10A
Gate Threshold Voltage
Drain-Source Leakage
Current
VGS(th) 1.0
IDSS
1.1
30
0.3
V VDS = VGS,ID = 250µA
30 µA VDS = 24V, VGS = 0
10 mA VDS = 24V, VGS = 0, Tj = 125°C
Gate-Source Leakage
Current
Forward Transconductance
Total Gate Charge
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
gFS
QG
QGS1
QGS2
QGD
Qsw
Qoss
RG
td (on)
tr
td (off)
tf
Ciss
Coss
Crss
±100
21
13 20
3.2
1.4
4.1
5.5
7.7
4.3 10
6.8
5.9
19
9.1
1500
310
140
±100 nA VGS = ±12V
28
18 27
5.8
S VGS=5V, ID=8.0A, VDS=15V
VGS=4.5V, ID=8.0A, VDS=15V
1.5
nC
4.9
6.4
11
2.6 5.0
8.8
3.3
17
7.0
2300
450
180
nC VDS = 16V, VGS = 0
Ω
VDD = 16V, ID = 8.0A
ns VGS = 4.5V
Clamped Inductive Load
pF VDS = 15V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min Typ Max
Continuous Source Current IS
10
(Body Diode)
Pulse Source Current
ISM
81
(Body Diode)
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
1 1.25
28
Reverse Recovery Charge Qrr
24
Reverse Recovery Time
trr
29
Reverse Recovery Charge Qrr
26
2
Min Typ Max Units
Conditions
10 A MOSFET symbol
D
showing the
81
intergral reverse G
p-n junction diode
S
0.43 0.50 V TJ = 25°C, IS = 1.0A,VGS= 0V
31
ns TJ = 125°C, IF = 8.0A, VR= 15V
26
nC di/dt = 100A/µs
31
ns TJ = 125°C, IF =8.0A, VR= 15V
26
nC di/dt =100A/µs
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