2SJ530 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
fabricante
2SJ530 Datasheet PDF : 9 Pages
| |||
2SJ530(L),2SJ530(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Avalanche current
I Note3
AP
Avalanche energy
E Note3
AR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
–60
V
±20
V
–15
A
–60
A
–15
A
–15
A
19
mJ
30
W
150
°C
–55 to +150
°C
Item
Symbol Min
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
V(BR)DSS
V(BR)GSS
I DSS
I GSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
–60
±20
—
—
–1.0
—
—
6.5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 4. Pulse test
Typ
—
—
—
—
—
0.08
0.11
11
850
420
110
12
75
125
75
–1.1
70
Max
—
—
–10
±10
–2.0
0.10
0.16
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –8A, VGS = –10V Note4
ID = –8A, VGS = –4V Note4
ID = –8A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –8A
RL = 3.75Ω
IF = –15A, VGS = 0
IF = –15A, VGS = 0
diF/ dt =50A/µs
2
Share Link: 