2SJ530 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

fabricante

2SJ530

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ530(L),2SJ530(S)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–4.0

Pulse Test

–3.2

–2.4

–1.6

–15 A

–10 A

–0.8

–5 A

0

–4 –8 –12 –16 –20

Gate to Source Voltage V GS (V)

Static Drain to Source on State Resistance

1

vs. Drain Current

0.5

0.2

VGS = –4 V

0.1

0.05

–10 V

0.02

Pulse Test

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

Drain Current I D (A)

Static Drain to Source on State Resistance

vs. Temperature

0.5

Pulse Test

0.4

0.3

I D = –15 A

–10 A –5 A

0.2 VGS = –4 V

0.1

–15 A

–10 V

0

-5,–10A

–40

0

40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance vs.

100

Drain Current

30

10

Ta = –25 °C

3

25 °C

75 °C

1

0.3

V DS = –10 V

Pulse Test

0.1

–0.1 –0.3 –1 –3 –10 –30 –100

Drain Current I D (A)

4

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