2SJ530 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

fabricante

2SJ530

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ530(L),2SJ530(S)

Body–Drain Diode Reverse

Recovery Time

500

200

100

50

20

10

di / dt = 50 A / µs

5

–0.1 –0.3

VGS = 0, Ta = 25 °C

–1 –3 –10 –20

Reverse Drain Current I DR (A)

5000

1000

Typical Capacitance vs.

Drain to Source Voltage

Ciss

VGS = 0

f = 1 MHz

300

Crss

100

Coss

30

10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V DS (V)

Dynamic Input Characteristics

0

0

V DD = –10 V I D = –15 A

–25 V

–20

–50 V

–4

–40

–8

V DS

–60

V GS

–12

V DD = –50 V

–25 V

–80

–10 V

–16

–100

0

8

16 24 32

Gate Charge Qg (nc)

–20

40

1000

300

100

Switching Characteristics

V GS = –10 V, V DD = –30 V

Pw = 5 µs, duty < 1 %

t d(off)

tf

30

tr

t d(on)

10

3

1

–0.1 –0.3

–1

–3 –10 –20

Drain Current I D (A)

5

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