BTS112A Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

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BTS112A

TEMPFET®

Infineon Technologies 

Drain-source on-state resistance

RDS(on) = f (Tj)

Parameter: ID = 5 A, VGS = 10 V

TEMPFET® BTS 112 A

Gate threshold voltage VGS(th) = f (Tj)

Parameter: VDS = VGS, ID = 1 mA

Typ. transfer characteristic

ID = f (VGS)

Parameter: tp = 80 µs, VDS = 25 V

Typ. transconductance gfs = f (ID)

Parameter: tp = 80 µs, VDS = 25 V

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19.02.04

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