OM5N100NK Ver la hoja de datos (PDF) - Omnirel Corp => IRF
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OM5N100NK Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
Drain Current
1000
2.0
ID(on) On-State Drain Current
5.0
RDS(on) Static Drain-Source On-State
Resistance1 - OM5N100NK
V
4.0 V
100 nA
- 100 nA
0.25 mA
1.0 mA
A
3.0
VGS = 0,
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS = 20 V, VDS = 0
VGS = - 20 V, VDS = 0
VDS = Max. Rat., VGS = 0
VDS = 0.8 x Max. Rat.,
VGS = 0, TC = 125° C
VDS > ID(on) x RDS(on)Max.,
VGS = 10 V
VGS = 10 V, ID = 2.5 A
RDS(on) Static Drain-Source On-State
Resistance1 - OM5N100NK
RDS(on) Static Drain-Source On-State
Resistance1 - OM6N100NK
6.0
VGS = 10 V, ID = 2.5 A
TC = 100° C
2.0
VGS = 10 V, ID = 3.0 A
RDS(on) Static Drain-Source On-State
Resistance1 - OM6N100NK
4.0
VGS = 10 V, ID = 3.0 A
TC = 100° C
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
td (off)
tf
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
2800
350
130
65
55
62
25
S VDS = 25V, ID = 3.5 A
pF VGS = 0
pF VDS = 25 V
pF f = 1 MHz
ns VDD = 400 V, ID = 6 A
ns Rg = 7 W , VGS = 10 V
ns VDD = 800 V, ID = 6 A,
ns RG = 7 , VBS = 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
ISM
Source Current2
(Body Diode)
VSD Diode Forward Voltage1
trr
Reverse Recovery Time
6
24
2.5
1100
A Modified MOSPOWER
D
symbol showing
A
G
the integral P-N
Junction rectifier.
S
V TC = 25 C, IS = 6 A, VGS = 0
ns IF = IS, VDD = 100V,
dlF/ds = 100 A/ms, TJ =150°C
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
OM5N100NK OM6N100NK
VDS
VDGR
ID @ TC = 25°C
ID @ TC = 100°C
IDM
VGS
PD @ TC = 25°C
PD @ TC =100°C
Junction-To-Case
Drain-Source Voltage
Drain-Source Voltage (RGS = 20k )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1000
1000
5.0
3.1
24
±20
130
51
1.00
1000
1000
6.0
3.7
24
±20
130
51
1.00
Junction-To-Ambient Linear Derating Factor
.033
.033
TJ
Tstg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10secs.)
-55 to 150
300
-55 to 150
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
°C
°C
THERMAL RESISTANCE (Maximum) at TA = 25°C
RthJC
Junction-To-Case Max.
1.0
RthJA
Junction-to-Ambient
30
°C/W
°C/W Free Air Operation
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