2SD1794 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SD1794 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1794
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 10mA
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 5A, VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V
Switching Times; Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= -IB2= 10mA
VBB2= 4V; RL= 6Ω
MIN TYP. MAX UNIT
200
V
1.5
V
2.0
V
0.1
mA
0.1
mA
5
mA
1500
30000
20
MHz
2
μs
12
μs
5
μs
isc Website：www.iscsemi.cn
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