AUIRF9952QTR Ver la hoja de datos (PDF) - Infineon Technologies
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AUIRF9952QTR Datasheet PDF : 11 Pages
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AUTOMOTIVE GRADE
AUIRF9952Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Full Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
N-CHANNEL MOSFET
S1
1
8
D1
N-CH P-CH
G1
2
S2
3
7
D1
VDSS
6
D2
30V -30V
G2
4
5 D2 RDS(on) max. 0.10 0.25
P-CHANNEL MOSFET
Top View
ID
3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide
variety of other applications.
SO-8
AUIRF9952Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF952Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF9952QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
3.5
-2.3
2.8
-1.8
16
-10
2.0
1.3
0.016
± 20
44
57
2.0
-1.3
0.25
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-5
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