BA1282(2006) Ver la hoja de datos (PDF) - Vishay Semiconductors

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Lista de partido

BA1282
(Rev.:2006)

Band Switching Diodes

Vishay Semiconductors 

BA1282 / BA1283

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction to ambient air

mounted on epoxy-glass hard

RthJA

500

K/W

tissue, Fig. 1

35 μm copper clad, 0.9 mm2

copper area per electrode

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

- 55 to + 150

°C

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Forward voltage

Reverse current

Diode capacitance

IF = 100 mA

VR = 20 V

f = 100 MHz, VR = 1 V

f = 100 MHz, VR = 3 V

Differential forward resistance f = 200 MHz, IF = 3 mA

f = 200 MHz, IF = 10 mA

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Part

Symbol

Min

VF

IR

CD

BA1282

CD

BA1283

CD

BA1282

rf

BA1283

rf

BA1282

rf

BA1283

rf

Typ.

Max

Unit

1000

mV

50

nA

1.5

pF

1.25

pF

1.2

pF

0.7

Ω

1.2

Ω

0.5

Ω

0.9

Ω

100

f = 200 MHz

Tj = 25 °C

10

BA 1283

1

0.1

0.1

94 9076

BA 1282

1

10

100

I F - Forward Current (mA)

Figure 1. Differential Forward Resistance vs. Forward Current

3.0

2.5

f = 200 MHz

Tj = 25 °C

2.0

1.5

1.0

BA 1283

0.5

BA 1282

0

0.1

1

10

100

94 9077

VR - Reverse Voltage (V)

Figure 2. Diode Capacitance vs. Reverse Voltage

www.vishay.com

2

Document Number 85525

Rev. 1.8, 07-Mar-06

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