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2SB649

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB649

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA ; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Vltage

IE= -1mA ; IC=0

VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA

VBE(on) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= -150mA ; VCE= -5V

VCB= -160V; IE= 0

hFE-1

DC Current Gain

IC= -150mA ; VCE= -5V

hFE-2

DC Current Gain

IC=-500mA ; VCE= -5V

fT

Current-Gain—Bandwidth Product

IC= -150mA ; VCE= -5V

COB

Output Capacitance

IE= 0; VCB= -10V,ftest= 1MHz

‹ hFE-1 Classifications

B

C

D

60-120 100-200 160-320

MIN TYP. MAX UNIT

-180

V

-120

V

-5

V

-1.0 V

-1.5 V

-10 μA

60

320

30

140

MHz

27

pF

isc Website：www.iscsemi.cn

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