2SB649 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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2SB649

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25t: unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

lc=-1mA;lE=0

V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA; RBE= ra

V(BR)EBO Emitter-Base Breakdown Vltage

lE=-1mA;lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -500mA; IB= -50mA

VsE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

lc=-150mA;VCE=-5V

VcB=-160V;lE=0

hpE-1 DC Current Gain

lc=-150mA;VcE=-5V

hpE-2

DC Current Gain

lc=-500mA ; VCE= -5V

COB Output Capacitance

lE=0;VcB=-10V,f,es,= 1MHz

hpE-1 Classifications

B

C

D

60-120 100-200 160-320

2SB649

MIN TYP, MAX UNIT

-180

V

-120

V

-5

V

-1.0 V

-1.5 V

-10 U A

60

320

30

27

pF

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