ZTX1049A(2007) Ver la hoja de datos (PDF) - Diodes Incorporated.

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ZTX1049A
(Rev.:2007)

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

ZTX1049A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-Base Breakdown V(BR)CBO

80

120

Voltage

V

IC=100μA

Collector-Emitter

Breakdown Voltage

VCES

80

120

V IC=100μA

Collector-Emitter

Breakdown Voltage

VCEO

25

30

V IC=10mA

Collector-Emitter

Breakdown Voltage

VCEV

80

120

V

IC=100μA, VEB=1V

Emitter-Base Breakdown V(BR)EBO

5

Voltage

8.75

V

IE=100μA

Collector Cut-Off Current

Emitter Cut-Off Current

ICBO

IEBO

0.3

10

nA VCB=50V

0.3

10

nA VEB=4V

Collector Emitter Cut-Off

Current

ICES

0.3

10

nA VCES=50V

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

VCE(sat)

VBE(sat)

30

45

mV IC=0.5A, IB=10mA*

60

80

mV IC=1A, IB=10mA*

125

180

mV IC=2A, IB=10mA*

155

220

mV IC=4A, IB=50mA*

890

950

mV IC=4A, IB=50mA*

Base-Emitter Turn-On

Voltage

VBE(on)

820

900

mV IC=4A, VCE=2V*

Static Forward Current

hFE

Transfer Ratio

Transition Frequency

fT

250

430

300

450

300

450

1200

200

350

35

70

IC=10mA, VCE=2V*

IC=0.5A, VCE=2V*

IC=1A, VCE=2V*

IC=4A, VCE=2V*

IC=20A, VCE=2V*

180

MHz IC=50mA, VCE=10V

f=50MHz

Output Capacitance

Cobo

45

60

pF VCB=10V, f=1MHz

Turn - On Time

ton

125

ns IC=4A, IB=40mA, VCC=10V

Turn -Off Time

toff

380

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%

ns IC=4A, IB=±40mA, VCC=10V

ISSUE 3 - JUNE 2007

2

SEMICONDUCTORS

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