DRD420D12 Ver la hoja de datos (PDF) - Dynex Semiconductor

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DRD420D12

Rectifier Diode

Dynex Semiconductor 

DRD420D

SURGE RATINGS

Symbol

Parameter

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

Conditions

10ms half sine; Tcase = 175oC

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 175oC

VR = 0

Max. Units

56

kA

15.68 x 106 A2s

70

kA

24.5 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

R

th(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

T

Storage temperature range

stg

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 45.0kN

with mounting compound

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

- 0.013 oC/W

- 0.025 oC/W

- 0.027 oC/W

- 0.003 oC/W

- 0.006 oC/W

-

185

oC

-

175

oC

-55 200

oC

40.0 48.0 kN

3/7

www.dynexsemi.com

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