7C1049V33-17 Ver la hoja de datos (PDF) - Cypress Semiconductor
Número de pieza
componentes Descripción
Lista de partido
7C1049V33-17 Datasheet PDF : 8 Pages
| |||
CY7C1049V33
Switching Characteristics[5] Over the Operating Range
7C1049V33-12
7C1049V33-15
7C1049V33-17
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max. Unit
READ CYCLE
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
tDOE
OE LOW to Data Valid
tLZOE
tHZOE
tLZCE
tHZCE
OE LOW to Low Z
OE HIGH to High Z[5, 6]
CE LOW to Low Z[6]
CE HIGH to High Z[5, 6]
tPU
CE LOW to Power-Up
tPD
CE HIGH to Power-Down
WRITE CYCLE[7, 8]
12
15
17
ns
12
15
17
ns
3
3
3
ns
12
15
17
ns
6
7
8
ns
0
0
0
ns
6
7
8
ns
3
3
3
ns
6
7
8
ns
0
0
0
ns
12
15
17
ns
tWC
Write Cycle Time
tSCE
CE LOW to Write End
tAW
Address Set-Up to Write End
tHA
Address Hold from Write End
tSA
Address Set-Up to Write Start
tPWE
WE Pulse Width
tSD
Data Set-Up to Write End
tHD
tLZWE
tHZWE
Data Hold from Write End
WE HIGH to Low Z[6]
WE LOW to High Z[5, 6]
Shaded areas contain preliminary information.
12
15
17
ns
10
12
13
ns
10
12
13
ns
0
0
0
ns
0
0
0
ns
10
12
13
ns
7
8
9
ns
0
0
0
ns
3
3
3
ns
6
7
8
ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
4
Share Link: 