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T15V256A

32K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

Preliminary T15V256A

CAPACITANCE

(Vcc = 2.7V to 3.6V, Ta = 25°C, f = 1 MHz)

PARAMETER

Input Capacitance

Input/ Output Capacitance

SYMBOL

CIN

CI/O

CONDITION

VIN = 0V

VOUT = 0V

Note: These parameters are sampled but not 100% tested.

MAX.

6

8

UNIT

pF

pF

AC TEST CONDITIONS

PARAMETER

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Reference Level

Output Load

0.6V to 2.4V

3 ns

1.4V

See Fig. 1,2

CONDITIONS

AC TEST LOADS AND WAVEFORM

3.0V

OUTPUT

R1 - 1210 ohm

30pF

Including

Jig and

Scope

Fig 1

3.0V

OUTPUT

R2

1380 ohm

R1- 1210 ohm

5pF

Including

Jig and

Scope

R2

1380

ohm

(For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW )

Fig 2

Taiwan Memory Technology, Inc. reserves the right P. 4

to change products or specifications without notice.

Publication Date: MAY. 2001

Revision:0.D

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