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IRFS750A

Advanced Power MOSFET

Fairchild Semiconductor 

IRFS750A

N-CHANNEL

POWER MOSFET

Electrical Characteristics (TC=25ΟC unless otherwise specified)

Symbol

BVDSS

∆BV/ ∆TJ

VGS(th)

IGSS

IDSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Characteristic

Min. Typ. Max. Units

Test Condition

Drain-Source Breakdown Voltage 400 -- -- V VGS=0V,ID=250 µA

Breakdown Voltage Temp. Coeff. -- 0.46 -- V/ΟC ID=250 µA See Fig 7

Gate Threshold Voltage

2.0 -- 4.0 V VDS=5V,ID=250 µA

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

-- -- 100 nA VGS=30V

-- -- -100

VGS=-30V

-- -- 10

VDS=400V

Drain-to-Source Leakage Current -- -- 100 µA VDS=320V,TC=125ΟC

Static Drain-Source

On-State Resistance

-- -- 0.3 Ω VGS=10V,ID=4.2A

O4

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

-- 8.6 --

Ω VDS=50V,ID=4.2A

O4

-- 2140 2780

-- 305 350 pF VGS=0V,VDS=25V,f =1MHz

See Fig 5

-- 134 155

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

-- 20 50

-- 22 55

VDD=200V,ID=17A,

-- 100 210 ns RG=6.2 Ω

See Fig 13

-- 32 75

O4 O5

Total Gate Charge

Gate-Source Charge

Gate-Drain(“Miller”) Charge

-- 101 131

VDS=320V,VGS=10V,

-- 14 -- nC ID=17A

-- 51.5 --

See Fig 6 & Fig 12 O4 O5

Source-Drain Diode Ratings and Characteristics

Symbol

IS

ISM

VSD

trr

Qrr

Characteristic

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max. Units

Test Condition

--

O1 --

-- 8.4

Integral reverse pn-diode

A

-- 60

in the MOSFET

O4 -- -- 1.5 V TJ=25ΟC,IS=8.4A,VGS=0V

-- 385 -- ns TJ=25ΟC,IF=17A

-- 4.85 -- µ C diF/dt=100A/ µs

O4

Notes ;

O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

O2 L=30mH, IAS=8.4A, VDD=50V, RG=27Ω , Starting TJ =25ΟC

O3 ISD <_17A, di/dt <_250A/ µs, VDD <_ BVDSS , Starting TJ =25 ΟC

O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%

O5 Essentially Independent of Operating Temperature

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