PVD13 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

PVD13

Microelectronic Power IC BOSFET® Photovoltaic Relay Single-Pole, 500mA, 0-100V DC

International Rectifier 

Replaced by PVD13N Data Sheet No. PD10024E

Series PVD13

Microelectronic Power IC

BOSFET® Photovoltaic Relay

Single-Pole, 500mA, 0-100V DC

General Description

Features

The Photovoltaic DC Relay (PVD) is a single-pole,

normally open solid state replacement for electro-

BOSFET Power IC s

mechanical relays used for general purpose switch-

1010 Operations s

ing of analog signals. It utilizes as an output switch a

unique bidirectional (AC or DC) MOSFET power IC

termed a BOSFET. The BOSFET is controlled by a

300µsec Operating Time s

3 milliwatts Pick-Up Power s

photovoltaic generator of novel construction, which

1000V/µsec dv/dt s

OBSOLETE is energized by radiation from a dielectrically iso-

lated light emitting diode (LED).

The PVD overcomes the limitations of both conven-

tional and reed electromechanical relays by offering

the solid state advantages of long life, high operat-

ing speed, low pick-up power, bounce-free opera-

tion, low thermal voltages and miniaturization. These

advantages allow product improvement and design

innovations in many applications such as process

control, multiplexing, telecommunications, automatic

test equipment and data acquisition.

Bounce-Free s

8-pin DIP Package s

-40°C to 85°C s

UL recognized s

The PVD can switch analog signals from thermo-

couple level to 100 volts peak DC. Signal frequen-

cies into the RF range are easily controlled and

switching rates up to 2kHz are achievable. The ex-

tremely small thermally generated offset voltages

allow increased measurement accuracies.

Unique silicon technology developed by International

Rectifier forms the heart of the PVD. The monolithic

BOSFET contains a bidirectional N-channel power

MOSFET output structure. In addition, this power IC

chip has input circuitry for fast turn-off and gate pro-

tection functions. This section of the BOSFET chip

utilizes both bipolar and MOS technology to form

NPN transistors, P-channel MOSFETs, resistors, di-

odes and capacitors.

The photovoltaic generator similarly utilizes a unique

International Rectifier alloyed multijunction structure.

The excellent current conversion efficiency of this

technique results in the very fast response of the

PVD microelectronic power IC relay.

Part Identification

Part Number Operating

Voltage (DC)

PVD1352

0 – 100V

PVD1354

Sensitivity Off-State

Resistance

108 Ohms

5 mA

1010 Ohms

This advanced semiconductor technology has cre-

ated a radically new control device. Designers can

now develop switching systems to new standards of

electrical performance and mechanical compactness.

(BOSFET is a trademark of International Rectifier)

Share Link: