IRFF220 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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IRFF220

N-Channel Power MOSFET

New Jersey Semiconductor 

^s.mi-dondu.cto'L Lp10ducts., Una

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

IRFF220

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

Absolute Maximum

ID @ VGS = iov, TC = 25°c

ID @ VGS = iov, TC = ioo°c

IDM

PD @ TC = 25°c

VGS

EAS

IAR

EAR

dv/dt

Tj

TSTG

Ratings

Parameter

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current ®

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ®

Avalanche Current ®

Repetitive Avalanche Energy ®

Peak Diode Recovery dv/dt ®

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

Units

3.5

2.25

A

14

20

W

0.16

w/°c

±20

V

66

mJ

—

A

—

mJ

5.0

V/ns

-55 to 150

°C

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

g

Quality Semi-Conductors

dim. in in.

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