2SB1658 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Lista de partido

2SB1658

Silicon PNP transistor in a TO-126F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1658

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Base Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

PC (Tc=25℃)

Tj

Tstg

DATA SHEET

数值

Rating

-30

-30

-6.0

-5.0

-10

-2.0

1.0

10

150

-55～150

单位

Unit

V

V

V

A

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

符号

Symbol

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

DC Current Gain

hFE(1)

hFE(2)

Collector to Emitter Saturation

Voltage

VCE(sat) (1)

VCE(sat) (2)

VCE(sat) (3)

Base to Emitter Saturation Voltage VBE(sat)

Transition Frequency

fT

Reverse Transfer Capacitance

Cob

测试条件

Test Conditions

VCB=-30V IE=0

VEB=-6.0V IC=0

VCE=-2.0V IC=-1.0A

VCE=-2.0V IC=-4.0A

IC=-1.0A IB=-50mA

IC=-2.0A IB=-0.1A

IC=-4.0A IB=-0.2A

IC=-1.0A IB=-0.1A

VCE=-10V IC=-50mA

VCB=-10V f=1.0MHz

最小值 典型值 最大值 单位

Min Typ Max Unit

-0.1 μA

-0.1 μA

150

600

50

-0.09 -0.15 V

-0.17 -0.25 V

-0.32 -0.50 V

-0.87 -1.50 V

95

MHz

100

pF

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