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IDT7188L45DB
(Rev.:1996)

CMOS STATIC RAM 64K (16K x 4-BIT)

Integrated Device Technology 

IDT7188S/L

CMOS STATIC RAM 64K (16K x 4-BIT)

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Condition

VCC = Max.,

VIN = GND to VCC

VCC = Max., CS = VIH,

VOUT = GND to VCC

IOL = 10mA, VCC = Min.

IOL = 8mA, VCC = Min.

IOH = –4mA, VCC = Min.

MIL.

COM’L.

MIL.

COM’L.

MILITARY TEMPERATURE RANGE

IDT7188S

Min.

Max.

—

10

—

5

—

10

—

5

0.5

—

0.4

2.4

—

IDT7188L

Min.

Max.

—

5

—

2

—

5

—

2

—

0.5

—

0.4

2.4

—

Unit

µA

µA

V

V

2989 tbl 07

DC ELECTRICAL CHARACTERISTICS(1)

(VCC = 5V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

7188S25

7188L25

7188S35

7188L35

7188S45

7188L45

7188S55/70 7188S85

7188L55/70 7188L85

Symbol

Parameter

Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit

ICC1 Operating Power

Supply Current

CS = VIL, Outputs Open

VCC = Max., f = 0(2)

S

— 105 — 105 — 105 — 105 — 105 mA

L

— 80 — 80

— 80 — 80 — 80

ICC2 Dynamic Operating

Current

CS = VIL, Outputs Open

VCC = Max., f = fMAX(2)

S

— 155 — 140 — 140 — 140 —

L

— 120 — 115 — 110 — 110 —

ISB Standby Power Supply

Current (TTL Level)

CS ≥ VIH, VCC = Max.,

Outputs Open, f = fMAX(2)

S

— 60 — 50

— 50 — 50 —

L

— 40 — 40

— 35 — 35 —

ISB1 Full Standby Power

Supply Current (CMOS

Level) CS ≥ VHC,

VCC=Max., VIN ≥ VHC or

VIN ≤ VLC, f = 0(2)

S

— 20 — 20

— 20 — 20 —

L

— 1.5 — 1.5 — 1.5 — 1.5 —

NOTES:

1. All values are maximum guaranteed values.

2. At f = fMAX address and data inputs are cycling at the maximum frequency of read cycles of 1/tRC. f = 0 means no input lines change.

140 mA

105

50 mA

35

20 mA

1.5

2989 tbl 08

6.3

3

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