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IRF9Z24STRL

Power MOSFET

Vishay Semiconductors 

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

- 60

VGS = - 10 V

19

5.4

11

Single

0.28

S

I2PAK (TO-262)

D2PAK (TO-263)

G

G

SD

D

G

S

D

P-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount (IRF9Z24S, SiHF9Z24S)

• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)

• 175 °C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D2PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

The through-hole version (IR9Z24L, SiH9Z24L) is available

for low-profile applications.

ORDERING INFORMATION

Package

D2PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3

Lead (Pb)-free

IRF9Z24SPbF

SiHF9Z24S-E3

SnPb

Note

a. See device orientation.

IRF9Z24S

SiHF9Z24S

D2PAK (TO-263)

SiHF9Z24STRL-GE3a

IRF9Z24STRLPbFa

SiHF9Z24STL-E3a

IRF9Z24STRLa

SiHF9Z24STLa

D2PAK (TO-263)

SiHF9Z24STRR-GE3a

IRF9Z24STRRPbFa

SiHF9Z24STR-E3a

IRF9Z24STRRa

SiHF9Z24STRa

I2PAK (TO-262)

-

IRF9Z24LPbF

SiHF9Z24L-E3

IRF9Z24L

SiHF9Z24L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Currente

Pulsed Drain Currenta, e

VGS at - 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Linear Derating Factor

Single Pulse Avalanche Energyb, e

EAS

Repetitive Avalanche Currenta

IAR

Repetitive Avalanche Energya

EAR

Maximum Power Dissipation

Peak Diode Recovery dV/dtc, e

TA = 25 °C

TC = 25 °C

PD

dV/dt

Operating Junction and Storage Temperature Range

TJ, Tstg

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.

c.

IVSDDD=--1215AV, ,dsI/tdartting14T0J

= 25

A/μs,

°C, L = 2.3

VDD  VDS,

mH,

TJ 

R17g5=°2C5.

,

IAS

=

-

11

A

(see

fig.

12).

d. 1.6 mm from case.

e. Uses IRF9Z24, SiHF9Z24 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

LIMIT

- 60

± 20

- 11

- 7.7

- 44

0.40

240

- 11

6.0

3.7

60

- 4.5

- 55 to + 175

300d

UNIT

V

A

W/°C

mJ

A

mJ

W

W

V/ns

°C

Document Number: 91091

S10-1728-Rev. B, 02-Aug-10

www.vishay.com

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