IRF9Z24STRRPBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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IRF9Z24STRRPBF

Power MOSFET

Vishay Semiconductors 

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

15

12

9

6

3

0

25

91091_09

50

75 100 125 150 175

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

VDS

VGS

Rg

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

1 D = 0.50

0.2

0.1

0.05

0.1 0.02

0.01

10-2

10-5

91091_11

Single Pulse

(Thermal Response)

10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

1

10

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

Rg

- 10 V

tp

L

D.U.T.

IAS

0.01 Ω

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91091

S10-1728-Rev. B, 02-Aug-10

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

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