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6V62160E

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

FEDD56V62160E-07

MD56V62160E

Clock Suspension & DQM Operation Cycle @CAS Latency = 2, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLK

Note 1

Note 1

CKE

CS

RAS

CAS

ADDR Ra

Ca

A12,

A13

A10

Ra

Cb

Cc

DQ

Qa0 Qa1 Qa2

Qb0 Qb1

Dc0

Dc2

tOHZ

Note 2

tOHZ

Note 3

WE

UDQM,

LDQM

Row Active

CLOCK

Suspension

Read Command

Read DQM

Read Command

Read DQM

Write

DQM

Write DQM

Write

CLOCK Suspension

Command

*Note: 1. When Clock Suspension is asserted, the next clock cycle is ignored.

2. When UDQM and LDQM are asserted, the read data after two clock cycles is masked.

3. When UDQM and LDQM are asserted, the write data in the same clock cycle is masked.

4. When LDQM is set High, the input/output data of DQ1 – DQ8 is masked.

5. When UDQM is set High, the input/output data of DQ9 – DQ16 is masked.

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