S1D2511B01 Ver la hoja de datos (PDF) - Samsung
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S1D2511B01 Datasheet PDF : 34 Pages
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S1D2511B01
ELECTRICAL CHARACTERISTICS
( V = 5V, Tamb = 25 °
Table 4. Sync Processor Electrical Characteristics
Symbol
Conditions
Horizontal and vertical input threshold
voltage (pin 1, 2)
Low level
High level
Horizontal and vertical pull-up resister RIN
Falling and rising output CMOS buffer TfrOut
(pin 3)
VHlock
LOCKOUT= -250 A
Unlocked, I
= +250µ
TH(9)
VoutT
C0 = 820pF
I2
(See also I2
2C sub address control)
Typ Max
0.8 V
200
K
200 ns
0
V
5
V
35
%
2C Read/Write Operating Conditions
Symbol
Min
VinH
3.0
VinL
0
fSCL
-
tBUF
1.3
tHDS
0.6
tSUP
0.6
tLOW
1.3
tHIGH
0.6
tHDAT
0.3
tSUPDAT
0.25
tR
-
tF
-
Max Unit
5.0
V
1.5
V
200
kHz
-
uS
-
uS
-
uS
-
uS
-
uS
-
uS
-
uS
1.0
uS
3.0
uS
8
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