74LVXC4245TTR(2004) Ver la hoja de datos (PDF) - STMicroelectronics
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74LVXC4245TTR Datasheet PDF : 14 Pages
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74LVXC4245
Table 10: Capacitive Characteristics
Test Condition
Value
Symbol Parameter
CINA
CI/O
CPD
CPD
Input
Capacitance
Input/Output
Capacitance
Dynamic Low
Level Quiet
Output (note 1)
A to B
Dynamic Low
Level Quiet
Output (note 1)
B to A
VCCA VCCB
(V) (V)
open open
5.0 3.3
5.0 3.3
5.0 3.3
TA = 25 °C
-40 to 85 °C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
4.5 10
10
10 V
10
V
55
V
40
V
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit)
Figure 3: Test Circuit
tPLH, tPHL
tPZLH, tPLZ
tPZH, tPHZ
TEST
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = R1 = 500Ω or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
SWITCH
Open
2VCC
Open
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