A1232 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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A1232

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcE(sat) Collector-Emitter Saturation Voltage lc= -5.0A; IB= -0.5A

VeE(sat) Base-Emitter Saturation Voltage

lc= -5.0A; IB= -0.5A

ICBO

Collector Cutoff Current

VCB=-130V;IE=0

IEBO

Emitter Cutoff Current

VEB= -3V; lc= 0

hpE-1

DC Current Gain

lc= -2A; VCE= -5V

hlFE-2

DC Current Gain

lc= -5A; VCE= -5V

COB

Output Capacitance

lE=0;VCB=-10V;f= 1.0MHz

fi

Current-Gain—Bandwidth Product lc= -1A; VCE= -5V

hpE-1 Classifications

R

Q

P

60-120 100-200 160-320

2SA1232

MIN TYP. MAX UNIT

-1.5

V

-2.0 V

-50 M A

-50 u A

60

320

40

250

PF

60

MHz

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