C3619 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Lista de partido

C3619

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3619

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

ICBO

Collector cutoff current

VCB=240V;IE=0

IEBO

Emitter cutoff current

VEB=7V;IC=0

VCEsat Collector-emitter saturation voltage IC=10mA ;IB=1mA

VBEsat Base-emitter saturation voltage

IC=10mA ;IB=1mA

hFE-1

DC current gain

IC=4mA ; VCE=10V

hFE-2

DC current gain

IC=20mA ; VCE=10V

COb

Output capacitance

IE=0; VCB=20V;f=1MHz

fT

Transition frequency

IC=20mA ; VCE=10V,

MIN TYP. MAX UNIT

0.1

μA

0.1

μA

1

V

1

V

20

30

200

3

pF

50

MHz

2

Share Link: