2SB703 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SB703

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB703

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0

-80

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-80

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A

-2.0 V

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= -3A; IB=B -0.3A

VCB= -80V; IE= 0

-2.0 V

-10 μA

IEBO

Emitter Cutoff Current

VEB= -3V; IC= 0

-10 μA

hFE-1

DC Current Gain

IC= -20mA; VCE= -5V

30

hFE-2

DC Current Gain

IC= -0.5A; VCE= -5V

40

200

fT

Current-Gain—Bandwidth Product

IC= -0.1A; VCE= -5V; ftest= 1.0MHz 10

MHz

‹ hFE-2 Classifications

S

R

Q

40-80 60-120 100-200

isc Website：www.iscsemi.cn

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