IRFN130SMD Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
Número de pieza
componentes Descripción
Lista de partido
IRFN130SMD Datasheet PDF : 2 Pages
| |||
IRFN130SMD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
ID = 7A
ID = 11A
ID = 250mA
IDS = 7A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
ID = 11A
VDS = 0.5BVDSS
Qgs Gate – Source Charge
ID = 11A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
td(on)
tr
td(off)
tf
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 50V
ID = 11A
RG = 7.5W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current
VSD Diode Forward Voltage
IS = 11A
VGS = 0
TJ = 25°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS = 11A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
LS
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
100
2
3
12.8
1.0
3.8
Typ.
0.1
650
240
44
8.7
8.7
Max. Unit
V
V/°C
0.19
W
0.22
4
V
S((WW)
25
mA
250
100
nA
-100
pF
28.5 nC
6.3
nC
16.6
30
75
ns
40
45
11
A
43
1.5
V
300 ns
3
mC
nH
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 7/00
Share Link: 