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CPV363MM

IGBT SIP MODULE Short Circuit Rated Fast IGBT

International Rectifier 

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CPV363MM

10

8

6

4

TC= 90°C

2 TJ = 125°C

Power Factor = 0.8

Modulation Depth = 0.8

VCC = 60% of Rated Voltage

0

0.1

1

10

f, Frequency (kHz)

Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave

3.1

2.5

1.9

1.2

0.6

0

100

100

TJ = 25°C

TJ = 150°C

10

1

0.1

0.1

VGE = 15V

20µs PULSE WIDTH A

1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

100

TJ = 150°C

10

TJ = 25°C

VCC = 100V

1

5µs PULSE WIDTH A

5

10

15

20

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

C-419

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