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IRFR6215TRLPBF

HEXFET® Power MOSFET

Infineon Technologies 

IRFR/U6215PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

V(BR)DSS/TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Min.

-150

–––

–––

–––

-2.0

3.6

Typ.

–––

-0.20

–––

–––

–––

–––

IDSS

Drain-to-Source Leakage Current

––– –––

––– –––

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– –––

–––

Qg

Total Gate Charge

––– –––

Qgs

Gate-to-Source Charge

––– –––

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

––– –––

––– 14

––– 36

––– 53

––– 37

LD

Internal Drain Inductance

––– 4.5

LS

Internal Source Inductance

––– 7.5

Ciss

Input Capacitance

––– 860

Coss

Output Capacitance

––– 220

Crss

Reverse Transfer Capacitance

––– 130

Max.

–––

–––

0.295

0.58

-4.0

–––

-25

-250

-100

100

66

8.1

35

–––

–––

–––

–––

–––

–––

–––

–––

–––

Units

Conditions

V VGS = 0V, ID = -250µA

V/°C Reference to 25°C, ID = -1mA



VGS

VGS

=

=

-10V,

-10V,

ID

ID

=

=

-6.6A

-6.6A



TJ

=150°C

V VDS = VGS, ID = -250µA

S VDS = -50V, ID = -6.6A

µA VDS = -150V, VGS = 0V

VDS = -120V,VGS = 0V,TJ =150°C

nA

VGS = -20V

VGS = 20V

ID = -6.6A

nC VDS = -120V

VGS = -10V, See Fig. 6 and 13 

VDD = -75V

ns

ID = -6.6A

RG = 6.8

RD = 12See Fig. 10 

Between lead

nH

,6mm (0.25in.)

from package

and center of die contact

VGS = 0V

pF VDS = -25V

ƒ = 1.0MHz,See Fig. 5 

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– -13

––– ––– -44

MOSFET symbol

A

showing the

integral reverse

p-n junction diode.

––– ––– -1.6

––– 160 240

V TJ = 25°C,IS = -6.6A,VGS = 0V 

ns TJ = 25°C ,IF = -6.6A

––– 1.2 1.7 C di/dt = 100A/µs 

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature. (See Fig.11)

 starting TJ = 25°C, L = 14mH, RG = 25, IAS = -6.6A.(See Fig.12)

 ISD -6.6A, di/dt  -620A/µs, VDD  V(BR)DSS, TJ  175°C

 Pulse width 300µs; duty cycle  2%.

 This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact.

Uses IRF6215 data and test conditions.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994.

2

2016-5-31

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