IRFR6215PBF Ver la hoja de datos (PDF) - Infineon Technologies

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IRFR6215PBF

HEXFET® Power MOSFET

Infineon Technologies 

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

10

IRFR/U6215PbF

100

VGS

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

10

-4.5V

20µs PULSE WIDTH

1

Tc = 25°C

A

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics

-4.5V

20µs PULSE WIDTH

1

TC = 175°C

A

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig. 2 Typical Output Characteristics

100

TJ = 25°C

TJ = 175°C

10

VDS = -50V

1

4

5

6

20µs PULSE WIDTH

7

8

9

10 A

-VGS , Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics

3

2.5 ID = -11A

2.0

1.5

1.0

0.5

0.0

VGS = -10V A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig. 4 Normalized On-Resistance

vs. Temperature

2016-5-31

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