IRFU6215PBF Ver la hoja de datos (PDF) - Infineon Technologies

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IRFU6215PBF

HEXFET® Power MOSFET

Infineon Technologies 

IRFR/U6215PbF

14

12

10

8

6

4

2

0

25

50

75

100

125

150

175

TC, Case Temperature ( °C)

Fig 9. Maximum Drain Current vs. Case Temperature

10

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

1 D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

PDM

Notes:

1. Duty factor D = t1 / t 2

t1

t2

0.01

0.00001

0.0001

0.001

0.01

2. Peak TJ = PDM x Z thJC + TC

0.1

A

1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

5

2016-5-31

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