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IRFP448

Power MOSFET

Vishay Semiconductors 

Power MOSFET

IRFP448, SiHFP448

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

500

RDS(on) (Ω)

VGS = 10 V

0.60

Qg (Max.) (nC)

84

Qgs (nC)

8.4

Qgd (nC)

50

Configuration

Single

D

TO-247AC

S

D

G

G

S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

DESCRIPTION

Third Generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247AC package is preferred for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because of its isolated mounting hole. It also

provides greater creepage distance between pins to meet

the requirements of most safety specifications.

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-247AC

IRFP448PbF

SiHFP448-E3

IRFP448

SiHFP448

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

VGS at 10 V

TC = 25 °C

TC = 100 °C

TC = 25 °C

VDS

VGS

ID

IDM

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Mounting Torque

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 8.2 mH, Rg = 25 Ω, IAS = 11 A (see fig. 12).

c. ISD ≤ 11 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

LIMIT

500

± 20

11

6.6

44

1.4

550

11

18

180

3.5

- 55 to + 150

300d

10

1.1

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

lbf · in

N·m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91229

S11-0444-Rev. B, 14-Mar-11

www.vishay.com

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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