BTS410E2 Ver la hoja de datos (PDF) - Infineon Technologies
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BTS410E2 Datasheet PDF : 16 Pages
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BTS 410 E2
Truth Table
Input- Output
Status
level
Normal
L
operation
H
Open load
L
H
Short circuit
L
to GND
H
Short circuit
L
to Vbb
H
Overtem-
L
perature
H
Under-
L
voltage
H
Overvoltage
L
H
level
L
H
13)
H
L
L
H
H
L
L
L
L
L
L
412
410
410
410
410
B2
D2
E2/F2
G2
H2
H
H
H
H
H
H
H
H
H
H
L
H
H
H
L
H
L
L
L
H
H
H
H
H
H
L
L
L
H
L
L
H
H
H
L
H
H (L14)) H (L14)) H (L14))
H
L
L
L
L
L
L
L
L
L
L
L15)
L15)
H
H
H
L15)
L15)
H
H
H
L
L
H
H
H
L
L
H
H
H
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Input circuit (ESD protection)
Ibb
3
I IN
IN
Vbb
2
IL
I ST
PROFET
OUT
5
ST
4
V IN VST
GND
Vbb
1 IGND
R GND
VON
VOUT
IN
RI
ESD-
ZDI1 ZDI2
II
GND
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
13) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
15) No current sink capability during undervoltage shutdown
Semiconductor Group
6
2003-Oct-01
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